PART |
Description |
Maker |
MGFC45V5964A C455964A1 |
5.9 - 6.4 GHz BAND 32W INTERNALLY MATCHED GaAs FET From old datasheet system 5.9~6.4GHz BAND 32W INTERNALLY MATCHD GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MGFS45V2123A |
2.1 - 2.3GHz BAND 32W INTERNALLY MATCHD GaAs FET 2.1-2.3 GHz BAND 32W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
|
MGFC45V5964A |
5.9-6.4GHz BAND 32W INTERNALLY MATCHD GaAs FET
|
Mitsubishi Electric Corporation
|
SY89833L SY89833LMITR SY89833LMI |
3.3V / 2GHz ANY-DIFFERENTIAL INPUT-TO-LVDS 1:4 FANOUT BUFFER/TRANSLATOR W/ INTERNAL TERMINATION 3.3V, 2GHz ANY-DIFFERENTIAL INPUT-TO-LVDS 1:4 FANOUT BUFFER/TRANSLATOR W/ INTERNAL TERMINATION 3.3V 2GHz ANY-DIFFERENTIAL INPUT-TO-LVDS 1:4 FANOUT BUFFER/TRANSLATOR W/ INTERNAL TERMINATION
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MICREL[Micrel Semiconductor]
|
MGFC40V6472 |
6.4 - 7.2GHz BAND 10W INTERNALLY MATCHED GaAs FET 6.4- 7.2GHz BAND 10W INTERNALLY MATCHED GaAs FET 6.4 - 7.2GHz频段10W的内部匹配砷化镓场效应管
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Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric, Corp.
|
MGFC39V6472A |
6.4-7.2GHz BAND 8W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
|
MGFC44V6472 |
6.4-7.2GHz BAND 24W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MGFC44V3642 |
3.6-4.2GHz BAND 24W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MGFC41V3642_04 MGFC41V3642 |
3.6 - 4.2GHz BAND 12W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MGFC39V6472A C396472A |
6.4 - 7.2GHz BAND 8W INTERNALLY MATCHED GaAs FET From old datasheet system
|
http:// Mitsubishi Electric Semiconductor
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